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HVL-395/HJT

N-type wafer based HJT cell boasts extra low light induced (LID) and close to zero potential induced degradation (PID)
  • Nominal Power
    395 Wp
  • Efficiency
    19.75 %
  • Linear performance warranty
    30 years
  • Product Warranty, (materials and workmanship)
    15 years
  • Operating Temperature
    from -40 to +85 °С
  • Dimensions (LхWхT)
    1996х1002х30 mm
  • Zertifizierungen
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Spezifikationen
  • Max Power Current (Impp)
    8.76 A
  • Short Circuit Current (Isc)
    9.21 A
  • Open Circuit Voltage (Vос)
    53.18 V
  • Module technology
    Heterojunction (HJT)
  • Max Power Voltage (Vmpp)
    44.84 V
  • Temperature Coefficient, Vос
    -0.244 %/°С
  • Temperature Coefficient, Isc
    0.055 %/°С
  • Temperature Coefficient, Pmax
    -0.285 %/°С
  • Maximum System Voltage
    1500 V
  • Operating Temperature
    from -40 to +85 °С
  • 'NOCT
    38.8 °С
  • Maximum Static Load, front
    5400 Pa
  • Maximum Static Load, back
    3800 Pa
  • Fire rating
    C
  • Number of sides
    2
  • Weight
    32 kg
  • Volume
    0.066 m³
  • Junction Box: IP/bypass diodes
    IP65/3
  • Connector
    MC-4
  • Cable Cross Section
    to order/4 mm/mm²
  • Product Warranty, (materials and workmanship)
    15 years
  • Linear performance warranty
    30 years
Dokumentation

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